β-Ga2O3and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga2O3potential for next generation of power devices

Vı́llora, Encarnación G.; Arjoca, Stelian; Shimamura, Kiyoshi; Inomata, Daisuke; Aoki, Kazuo

doi:10.1117/12.2039305

Cited by 45 publications

(26 citation statements)

References 19 publications

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“…where J j exp V j is the reverse current density for each bias voltage measurement, J j Tun V j and J j Therm V j are the theoretical components of the current given by Eqs. (6) and (8), respectively.…”

Section: Theory and Modelingmentioning

confidence: 99%

“…In recent years, the monoclinic beta phase of gallium oxide (β-Ga 2 O 3 ) is promising for next-generation power electronic devices because of its excellent material properties for high-voltage applications, e.g., a 4.8 eV bandgap, a breakdown field of 8 MV/cm, and a Baliga's figure of merit that is more than four times larger than those for SiC and GaN [1][2][3][4][5][6][7]. Moreover, it is available as high-quality freestanding β-Ga 2 O 3 substrates grown by inexpensive melt methods [7].…”

Section: Introductionmentioning

confidence: 99%

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Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Latreche

2019

SN Appl. Sci.

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A new analysis method of reverse leakage current for β-Ga 2 O 3 Schottky barrier diodes is performed by using two models: bias dependence and no bias dependence of barrier height. The method incorporates both the current induced by the tunneling of carriers through the Schottky barrier and the current induced by the thermionic emission of carriers across the metal-semiconductor interface. The experimental reverse transition voltage between thermionic emission and tunneling process can be determined from the intersection of the two components that were separated from the total current. Below the reverse transition voltage, the thermionic emission current dominates, and above it, the tunneling current dominates, while near the reverse transition voltage, neither tunneling nor thermionic emission accurately describes the conduction process because the both currents have the same order of magnitude; therefore, the both mechanisms must be combined together. The experimental reverse transition voltage (bias-dependent model) increases for low and high temperatures and decreases at intermediate temperatures for β-Ga 2 O 3 Schottky barrier diodes. The bias dependence of the barrier height model shows that the barrier height is strongly dependent (increases) on the reverse bias, in particular at low temperatures and low reverse bias. This model can explain the discrepancy between the experimental characteristics and those calculated by no bias dependence of barrier height model.

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Section: Theory and Modelingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Latreche

2019

SN Appl. Sci.

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“…It is considered that the combination between ␤-Ga 2 O 3 and GaN is more promising than that between ␤-Ga 2 O 3 and SiC. There have been some studies on GaN prepared on ␤-Ga 2 O 3 single crystals [6,7]. Two crystals of GaN and ␤-Ga 2 O 3 can be grown with an epitaxial relation to each other, even though GaN has the wurtzite structure and ␤-Ga 2 O 3 is a monoclinic structure.…”

Section: Introductionmentioning

confidence: 98%

Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction

Nakagomi

Sato

Takahashi

et al. 2015

Sensors and Actuators A: Physical

100

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“…It has been widely used as photocatalyst, solar-blind UV detectors, gas sensors, and short wavelength light emitting diodes34567. Besides, it is a promising candidate for power devices as higher Baliga’s figures of merit (over 3000) and higher breakdown field (8 MV/cm), a lower cost and more easily accessible properties compared with the conventional power semiconductors such as SiC and GaN891011.…”

mentioning

confidence: 99%

Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3

Dong

Jia

Xin

et al. 2017

Sci Rep

254

163

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The structural, electronic, and optical properties of β-Ga2O3 with oxygen vacancies are studied by employing first-principles calculations based on density function theory. Based on the defects formation energies, we conclude the oxygen vacancies are most stable in their fully charge states. The electronic structures and optical properties of β-Ga2O3 are calculated by Generalized Gradient Approximation + U formalisms with the Hubbard U parameters set 7.0 eV and 8.5 eV for Ga and O ions, respectively. The calculated bandgap is 4.92 eV, which is consistent with the experimental value. The static real dielectric constants of the defective structures are increased compared with the intrinsic one, which is attributed to the level caused by the Ga-4s states in the bandgap. Extra peaks are introduced in the absorption spectra, which are related to Ga-4s and O-2p states. Experimentally, β-Ga2O3 films are deposited under different O2 volume percentage with ratio-frequency magnetron sputtering method. The measured results indicate that oxygen vacancies can induce extra emission peaks in the photoluminescence spectrum, the location of these peaks are close to the calculated results. Extra O2 can increase the formation energies of oxygen vacancies and thus reduce oxygen vacancies in β-Ga2O3.

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β-Ga₂O₃and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga₂O₃potential for next generation of power devices

Cited by 45 publications

References 19 publications

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction

Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3

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