β-Ga₂O₃ nanowires for an ultraviolet light selective frequency photodetector

Abstract

The behaviour of β-Ga 2 O 3 nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium oxide substrates. Photocurrent measurements have been carried out on both undoped and Sn-doped Ga 2 O 3 nanowires to evidence the influence of the dopant on the photodetector performances. The responsivity spectrum of single nanowires show maxima in the energy range 4.8-5.4 eV and a strong dependence on the pulse frequency of the excitation light has been observed for undoped nanowires. Our results show that the responsivity of β-Ga 2 O 3 nanowires can be controlled by tuning the chopper frequency of the excitation light and/or by doping of the nanowires. Non-linear behaviour in characteristic current-voltage curves has been observed for Ga 2 O 3 : Sn nanowires. The mechanism leading to this behaviour has been discussed and related to space-charged-limited current effects. In addition, the responsivity achieved by doped nanowires at lower bias is higher than for undoped ones.

3D and 2D growth of SnO2 nanostructures on Ga2O3 nanowires: synthesis and structural characterization

“…A key advantage of TCO nanostructures is their surface properties. In particular, chemical sensors and ultraviolet (UV) solar-blind photodetectors based on tin oxide and gallium oxide thin films and/or nanomaterials have been already achieved [1][2][3] . The morphology of TCO nanostructures plays a key role in tailoring their physical properties and functionalities.…”

Diameter Tuning of β $$ \beta $$ -Ga2O3 Nanowires Using Chemical Vapor Deposition Technique

“…Recently, beta gallium oxide (β-Ga 2 O 3 ) with its one dimensional morphology is emerging as one of the potential semiconductor oxide nanomaterial. It has shown promising device applications including high-temperature gas sensors, UV photodetectors, high power field effect transistors (FET), and photonic switches [2, 3, 9–15]. β-Ga 2 O 3 exhibits advantageous properties including large band-gap with E g  ~ 4.7–4.9 eV at room temperature (RT), high breakdown field of 8 MVcm −1 , and outstanding thermal and chemical stability at high temperatures [11, 16–19].…”

“…Several applications of -Ga 2 O 3 nanostructures have been explored [3, 9, 10]. To grow, thermal chemical vapor deposition (CVD) is the most accepted and widely used technique [14, 20, 21].…”

Influence of Li doping on the morphology and luminescence of Ga2O3microrods grown by a vapor-solid method

“…In particular, applications such as luminescent devices [1], solar blind photodetectors [2,3], substrate for GaN-family highly luminescent devices [4], as well as high power devices [5] have increased the interest on thin film or bulk β-Ga2O3 during the last years. On the other hand, micro-and nanostructures based on this oxide presents further points of interest and have been investigated for several purposes.…”