β-hydride elimination processes on silicon

Klug, Debra‐Ann; Greenlief, C. Michael

doi:10.1116/1.580344

Cited by 21 publications

(17 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This peak exhibits a significant upward shift relative to the lone pair peak in ammonia. Consistent also with a previous study of ethylbromide adsorbed on the Si(100) surface at 110 K, [10] we ascribe the peak at 8.3 eV to the ethyl group. Figure 4 shows the effect of addition of a second ethyl group, i.e.…”

Section: Resultssupporting

confidence: 86%

UPS of multilayer nitrogen‐bearing compounds on the Si(100) surface

Bush

Craig

Roos

et al. 2008

Surface & Interface Analysis

View full text Add to dashboard Cite

Ultraviolet photoemission spectra (UPS) are presented for condensed layers of three ethylated amines; mono-, di-, and triethylamine (TEA) on the Si(100) surface at 100 K. The photoemission peaks associated with the nitrogen lone pair electrons are identified in the amines and compared with the corresponding spectra for condensed ammonia. Shifts in the lone pair binding energy for the ethyl-substituted amines are shown to be consistent with conventional chemical paradigms. Also, for comparison purposes spectra for two nonethylated amines, trimethylamine (TMA), and its silicon analog, trisilylamine (TSA), are presented and discussed.

show abstract

Section: Resultssupporting

confidence: 86%

UPS of multilayer nitrogen‐bearing compounds on the Si(100) surface

Bush

Craig

Roos

et al. 2008

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

“…β-Hydrogen elimination was found to be the major pathway for the surface ethyl group decomposition with a minor reaction following the R-hydrogen elimination pathway. [9][10][11][12]14,[16][17][18][19] Our own previous multiple internal reflection Fourier transform infrared spectroscopy (MIR FT-IR) studies of iodoethane adsorption and decomposition on a Si(100)-2 × 1 surface provided valuable spectroscopic benchmarks for the analysis of ethyl groups on semiconductors. 20,21 Here we show that spectroscopic characteristics of the ethyl entity can be used to analyze the binding environment of the ethyl group and to understand the nature of chemical interaction of nitroalkane molecules with surfaces.…”

Section: Introductionmentioning

confidence: 99%

Adsorption and Thermal Chemistry of Nitroethane on Si(100)-2 × 1

2003

View full text Add to dashboard Cite

Surface chemistry of nitroethane on Si(100)-2 × 1 has been investigated using multiple internal reflection Fourier transform infrared spectroscopy (MIR-FTIR), Auger electron spectroscopy (AES), and thermal desorption mass spectrometry. Molecular adsorption of nitroethane at submonolayer coverages dominates at cryogenic temperatures (95 K). As the surface temperature is increased to 140 K, chemical reaction involving nitro group occurs, whereas the ethyl entity remains intact. Similar behavior is observed for nitromethane. Thus, a barrier of approximately 36 kJ/mol is established for the interaction of nitroalkane molecules with the Si(100)-2 × 1 surface in contrast to the essentially barrierless transformation predicted previously theoretically for nitromethane. Further annealing of the silicon surface leads to the decomposition of nitroethane. The concentration of nitrogen and oxygen remains constant on a surface within the temperature interval studied here, whereas approximately half of the ethyl groups undergo hydrogen elimination, which releases ethylene and produces surface hydrogen. The rest of the ethyl groups decompose leading to the formation of surface carbon as confirmed by AES.

show abstract

“…Figure 1A, the peak desorption temperature, TP, shifts from 640 K to 540 K as a function of chloroethane exposure, which is in good agreement with previous reports. [19][20][21] For comparison, in a separate experiment, a clean, 340 K p-type Si(100) sample was also exposed to ethylene by backfilling and its m/z 27 electron-impact cracking fragment was selectively monitored during TPD experiments, as shown in Figure 1B. By comparing the two families of desorption traces ( Fig.…”

Section: Methodsmentioning

confidence: 99%

Spin Controlled Surface Chemistry: Alkyl Desorption from Si(100)-2x1 by Nonadiabatic Hydrogen Elimination

Pohlman¹,

Kaliakin²,

Varganov³

et al. 2020

Preprint

View full text Add to dashboard Cite

<div>An understanding of the role that spin states play in semiconductor surface chemical reactions is currently limited. Herein, we provide evidence of a nonadiabatic reaction involving a localized singlet to triplet thermal excitation of the Si(100) surface dimer dangling bond. By comparing the β-hydrogen elimination kinetics of ethyl adsorbates probed by thermal desorption experiments to electronic structure calculation results, we determined that a coverage-dependent change in mechanism occurs. At low coverage, a nonadiabatic, inter-dimer mechanism is dominant, while adiabatic mechanisms become dominant at higher coverage. Computational results indicate that the spin flip is rapid near room temperature and the nonadiabatic path is accelerated by a barrier that is 40 kJ/mol less than the adiabatic path. Simulated thermal desorption reactions using nonadiabatic transition state theory (NA-TST) for the surface dimer electron spin flip are in close agreement with experimental observations.</div>

show abstract

β-hydride elimination processes on silicon

Cited by 21 publications

References 6 publications

UPS of multilayer nitrogen‐bearing compounds on the Si(100) surface

UPS of multilayer nitrogen‐bearing compounds on the Si(100) surface

Adsorption and Thermal Chemistry of Nitroethane on Si(100)-2 × 1

Spin Controlled Surface Chemistry: Alkyl Desorption from Si(100)-2x1 by Nonadiabatic Hydrogen Elimination

Contact Info

Product

Resources

About