We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of B x C thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations.A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by b-hydride eliminations of C 2 H 4 to yield BH 3 . A complementary bimolecular reaction path based on H 2 assisted C 2 H 6 elimination to BH 3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600-1000 1Cfor the deposition of X-ray amorphous B x C films with 2.5 r x r 4.5 from TEB. Films grown at temperatures below 600 1C contain high amounts of H, while temperatures above 1000 1C result in C-rich films. The film density and hardness are determined to be in the range of 2.40-2.65 g cm À3 and 29-39 GPa, respectively, within the determined temperature window. † Electronic supplementary information (ESI) available: Tables with more details of the atomic content and measured densities and hardness of the films, and more details of the computations together with Cartesian coordinates of structures. See