β-SiC nanorods synthesized by hot filament chemical vapor deposition

Zhou, Xuedong; Wang, Naiyan; Lai, H. L.; Peng, Hongying; Bello, I.; Wong, Ning‐Bew; Lee, C. S.; Lee, S. T.

doi:10.1063/1.124231

Cited by 167 publications

(80 citation statements)

References 25 publications

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“…[3] In the VLS process, once the catalytic metal±Si alloy induces the SiNW growth, it would continue to do so as long as the Si vapor source continues. We used the metal-catalyst VLS approach to produce b-SiC nano rods, [14,15] SiC nanowires, [16] and aligned SiC nanowires [17] via hot-filament chemical vapor deposition (HFCVD) or laser ablation. Figure 1 shows Si and SiC nanowires synthesized by us using the VLS approach.…”

Section: The Oag Growth Of Silicon Nanowires (Sinws)mentioning

confidence: 99%

Oxide‐Assisted Growth of Semiconducting Nanowires

Lifshitz

Lee³

2003

Advanced Materials

589

452

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In this contribution, we outline oxide‐assisted growth (OAG) (distinct from the conventional metal‐catalytic vapor–liquid–solid (VLS) process) for the growth of nanostructured materials. This synthesis technique, in which oxides instead of metals play an important role in inducing the nucleation and growth of nanowires, is capable of producing large quantities of high‐purity silicon nanowires with a preferential growth direction, uniform size, and long length, without the need for a metal catalyst. The OAG 1D nanomaterials synthesis is complementary to, and coexistent with, the conventional metal‐catalyst VLS approach, and can be utilized to produce nanowires from a host of materials other than Si including Ge nanowires, carbon nanowires, silicon and SnO2 nanoribbons, and Group III–V and II–VI compound semiconductor nanowires.

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Section: The Oag Growth Of Silicon Nanowires (Sinws)mentioning

confidence: 99%

Oxide‐Assisted Growth of Semiconducting Nanowires

Lifshitz

Lee³

2003

Advanced Materials

589

452

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“…SiC nanorods have also shown great potential as an important candidate material for field-electron emitting devices [12]. SiC nanorods have been synthesized by several techniques, such as using carbon nanotubes as the templates to react with SiO [13], carbothermal reduction of silica xerogels [14], controlling the reaction between silicon halides and CCl 4 [15], and utilizing a hotfilament chemical vapor deposition approach to grow SiC nanorods on Si substrate [16]. However, a simpler and more effective method still needs to be developed to prepare SiC nanorods in large quantity for further practical applications.…”

Section: Introductionmentioning

confidence: 99%

Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties

Yang

Chen

Chatterjee

et al. 2003

Chemical Physics Letters

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“…This was contrary to the inert atmosphere commonly used for the growth of CNTs or Si NWs by various methods. In [28], SiC NWs were produced by the VLS mechanism in a HFCVD system using solid sources of Si and C. The process was catalyzed by metallic particles from impurities in the solid source (solid plate). The atomic hydrogen etched the solid plate and produced gaseous hydrocarbon radicals (CH x ), hydrosilicon radicals (SiH x ), or organosilicon molecules.…”

Section: C-sic Nw Growth Based On Vapor-liquid-solid (Vls) Mechanismmentioning

confidence: 99%

SiC nanowires: material and devices

Zekentes¹,

Rogdakis²

2011

J. Phys. D: Appl. Phys.

184

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Abstract. SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. Very low diameter (<10 nm) nanowires as well as nanowires free of planar defects have not been demonstrated and these are some of the main challenges. Another issue is the high unintentional doping of the nanowires that does not allow the demonstration of high performance field effect transistors using SiC nanowires as channel material. On the other hand, the grown nanowires are suitable for field emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in the different sections of the present paper.

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β-SiC nanorods synthesized by hot filament chemical vapor deposition

Cited by 167 publications

References 25 publications

Oxide‐Assisted Growth of Semiconducting Nanowires

Oxide‐Assisted Growth of Semiconducting Nanowires

Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties

SiC nanowires: material and devices

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