2024
DOI: 10.36227/techrxiv.171259972.26504822/v1
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γ-ray -induced Effects in Al:HfO2-based Memristor Devices for Memory and Sensor Applications

Om Kumar Prasad,
Sridhar Chandrasekaran,
Mari Napari
et al.

Abstract: e-Prints posted on TechRxiv are preliminary reports that are not peer reviewed. They should not b...

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