1997
DOI: 10.1016/s0038-1098(97)00098-7
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Γ-X hybridization effects on the carrier subband transition times in type I GaAsAlAs quantum wells

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Cited by 2 publications
(2 citation statements)
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“…However, a GaAs/AlAs quantum well undergoes a type-I-type-II transition for a width near 37 Å. Just before this width is reached, -X hybridization becomes relevant [25]. For this reason, we wanted to see whether, in narrow wells, such as one with L = 40 Å, the ELR behaviour was different from that of our calculations for L = 100 Å shown in the previous figures.…”
Section: Results and Commentsmentioning
confidence: 74%
“…However, a GaAs/AlAs quantum well undergoes a type-I-type-II transition for a width near 37 Å. Just before this width is reached, -X hybridization becomes relevant [25]. For this reason, we wanted to see whether, in narrow wells, such as one with L = 40 Å, the ELR behaviour was different from that of our calculations for L = 100 Å shown in the previous figures.…”
Section: Results and Commentsmentioning
confidence: 74%
“…In order to describe the superlattice electron envelope wavefunction we use a Kronig-Penney model [9]. In a recent study [10], we have shown that the -X mixing has little effect on the intra-and inter-subband transition times due to emission of optical phonon modes in type I quantum wells. Therefore we do not include the -X mixing and thus we avoid any adjustable parameters.…”
mentioning
confidence: 99%