ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors

Pavesi, M.; Fabbri, Filippo; Boschi, Francesco; Piacentini, Giovanni; Baraldi, A.; Bosi, Matteo; Gombia, E.; Parisini, A.; Fornari, R.

doi:10.1016/j.matchemphys.2017.11.023

Cited by 103 publications

(64 citation statements)

References 22 publications

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“…Further, the increased grain size with PAT can reduce the photocarriers transportation time, improving the relaxation time properties of the devices. Table 4 shows the comparison of the I dark , rise time (τ r ), and decay time (τ d ) of solar-blind photodetectors based on β-, α-, and ε-Ga 2 O 3 thin films synthesized by RFMS [30] and other techniques [2,6,26,[31][32][33][34]. As seen, the device has both low dark current and fast response time is difficult, but the photodetector we fabricated presents the low dark current and fast response time.…”

Section: Resultsmentioning

confidence: 99%

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Liu

Han

et al. 2020

Nanoscale Res Lett

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Effects of post annealing on the physical and electrical properties of solar-blind polycrystalline gallium oxide (Ga 2 O 3) ultraviolet photodetectors on the sapphire substrate are investigated. The grain size of poly-Ga 2 O 3 becomes larger with the post annealing temperature (PAT) increasing from 800°C to 1000°C, but it gets smaller with further raising PAT to 1100°C. A blue shift is observed at the absorption edge of the transmittance spectra of Ga 2 O 3 on sapphire as increasing PAT, due to the incorporation of Al from the sapphire substrate into Ga 2 O 3 to form (Al x Ga 1-x) 2 O 3. The high-resolution X-ray diffraction and transmittance spectra measurement indicate that the substitutional Al composition and bandgap of (Al x Ga 1-x) 2 O 3 annealed at 1100°C can be above 0.30 and 5.10 eV, respectively. The R max of the sample annealed at 1000°C increases about 500% compared to the as-deposited device, and the sample annealed at 1000°C has short rise time and decay time of 0.148 s and 0.067 s, respectively. This work may pave a way for the fabrication of poly-Ga 2 O 3 ultraviolet photodetector and find a method to improve responsivity and speed of response.

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Section: Resultsmentioning

confidence: 99%

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Liu

Han

et al. 2020

Nanoscale Res Lett

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“…Excellent solar-blind performance with high responsivity and low dark currents have been reported for β-Ga 2 O 3 deep-UV photodetectors. 6,[26][27][28][29][30][31][32] Both Schottky 14,17,27,30,[32][33][34] and metal-semiconductor-metal (MSM) 7,9,13,[19][20][21]35,36) type device architecture have been studied on bulk as well as epitaxial β-Ga 2 O 3 on foreign substrates. Battery-free, self-powered UV detectors reduce the weight and power supply requirement of imagers and prove to be beneficial in terms of reducing the footprint and complexity of systems.…”

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confidence: 99%

Demonstration of zero bias responsivity in MBE grown β-Ga₂O₃ lateral deep-UV photodetector

Pratiyush

Krishnamoorthy

Kumar

et al. 2018

Jpn. J. Appl. Phys.

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We demonstrate zero-bias spectral responsivity in MBE-grown β-Ga 2 O 3 planar UV-C detector with good linearity up to optical power density of 4.6 mW cm %2. Devices with asymmetrical metal contacts were realized on 150 nm thick β-Ga 2 O 3 films on sapphire. The device exhibited a spectral responsivity of 1.4 mA W %1 at 255 nm under zero-bias condition, dark current <10 nA at 15 V and UV-to-visible rejection ratio >10 5 at 5 V. The demonstrated UV-C detector exhibited an estimated high detectivity of 2.0 ' 10 12 Jones at 1 V and were found to be very stable and repeatable, suggesting its potential use for focal plane arrays.

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“…The built‐in electrical field, due to the discrete energy‐band and substantial band offset at the heterointerface, contributes to the rectify properties of Sr 3 Al 2 O 6 /Ga 2 O 3 heterojunction at both forward and reverse biases. The linearity of the photocurrent–voltage curve shown in Figure d (red line) indicates a reliable device operation, i.e., the photogenerated carriers under 254 nm UV light is linearly proportional to the optical generation rate …”

Section: Resultsmentioning

confidence: 93%

Rectifying Effect of the Sr₃Al₂O₆/Ga₂O₃ Heterojunction

Liu

Wang

Zhi

et al. 2019

Physica Status Solidi (a)

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Oxide semiconductors, including binary and ternary oxides, are promising to be utilized as active layers in electronics. The heterojunctions based on oxides exhibit many attractive physical and structural properties and are preferably used to fabricate devices. Herein, Sr 3 Al 2 O 6 /Ga 2 O 3 heterojunction is fabricated using radiofrequency magnetron sputtering on silicon substrate, which shows an enhanced current-voltage characteristic under the 254 nm ultraviolet light illumination due to the photogenerated carriers in Ga 2 O 3 . In addition, the heterojunction provides evident rectified properties in the dark, and the improved rectified properties can be obtained under the 254 nm UV light illumination due to the electron-hole pairs separation in the depletion region due to the built-in electric field, while the rectified ratio decrease from %700 at AE0.5 to %20 V at AE5 V, which is due to the electron tunneling caused by shrinking depletion layer. Moreover, the band offsets of the heterojunction is determined by the X-ray photoelectron spectroscopy, which suggests a type I alignment with conduction band offset of 0.94 AE 0.02 eV and valence band offset of 0.53 AE 0.02 eV. The interfacial energy band offsets verify the potential implication for their rectifying property.

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ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors

Cited by 103 publications

References 22 publications

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Demonstration of zero bias responsivity in MBE grown β-Ga₂O₃ lateral deep-UV photodetector

Rectifying Effect of the Sr₃Al₂O₆/Ga₂O₃ Heterojunction

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ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors

Cited by 103 publications

References 22 publications

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

Rectifying Effect of the Sr3Al2O6/Ga2O3 Heterojunction

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Demonstration of zero bias responsivity in MBE grown β-Ga₂O₃ lateral deep-UV photodetector

Rectifying Effect of the Sr₃Al₂O₆/Ga₂O₃ Heterojunction