Abstract:High-speed photodetectors (PDs) based on InGaAs/GaAs quantum well-dots (QWDs) nanostructures are investigated. The -3 dB bandwidth of 8.2 GHz at 905 nm has been demonstrated. It is shown that internal processes in QWDs make it possible to create a PD with a bandwidth of up to 12.5 GHz, and the processes of thermalization of carriers from QWD layers do not limit the speed at reverse biases of more than 5 V.
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