Влияние имплантации ионов Al-=SUP=-+-=/SUP=- на состав, электронную и кристаллическую структуру поверхности GaP(111)

Abstract

Nanocrystalline phases and GaAlP films were obtained by implanting Al+ ions with E0 = 1 keV at different doses on the surface of a GaP(111) single crystal, and their electronic and crystalline structures were studied. It is shown that the type and lattice parameters of a three-component nanostructure are in good agreement with those for the substrate. The relationship between the band gap Eg and the sizes of nanocrystalline phases is studied. It has been established that in the case of surface sizes of phases d less than 35–40 nm (thickness 3.5–4 nm), the quantum-size effects appear in the Ga0.6Al0.4P nanocrystalline phases.