Влияние кривизны поверхности на процессы физического распыления кремния ионами Ar низкой энергии

Abstract

In this paper molecular dynamics simulations of the irradiation of silicon nanoparticles with 200 eV Ar ions were performed. The detailed analysis of the results obtained demonstrates special features of the interaction between incident low-energy Ar ions and silicon targets with different surface curvature.