Влияние облучения электронами высокой энергии на характеристики ударных токов высоковольтных интегрированных 4H-SiC p-n-диодов Шоттки

Abstract

The effect of high energy (0.9 MeV) electron irradiation on surge currents of high-voltage 4H-SiC JBS was investigated in the microsecond range of the forward current pulses duration. With irradiation dose  growth, the threshold of hole injection monotonically increases, and the base modulation level by minority carriers (holes) decreases. At = 1.5×1016 cm-2, the hole injection is not observed up to forward voltage values of ~ 30 V and forward current density j  9000 A/cm2.