Влияние числа рядов GaInAs-квантовых объектов на ток насыщения GaAs-фотопреобразователей

Abstract

Electroluminescence spectra and the open circuit voltage vs photogenerated current characteristics for GaAs solar cells with different number of rows (r) of In0.4Ga0.6As quantum objects have been studied. For all samples with quantum objects, saturation current (J0), quantum object energy gap ), and the open circuit voltage drop (ΔVoc) have been obtained. A model is proposed that adequately describes the J0 – r and ΔVoс – r dependences. The model parameters have been found, including the current invariant Jz=1.4∙105 A/cm2, which uniquely connects the solar cell saturation current and a quantum object energy gap.