Высокочувствительный фотодетектор на основе атомарно-тонкого MoS-=SUB=-2-=/SUB=-

Abstract

A design for a high-sensitivity photodetector with a single layer of MoS_2 transition-metal dichalcogenide used as the basic functional element is proposed and the process of its fabrication is presented step by step. Quality evaluation and the selection of functional MoS_2 flakes is based on the results of combined optical characterization. The main operating characteristics of the fabricated device are investigated and a photosensitivity of 1.4 mA/W is demonstrated. A difference of this device in comparison with existing analogues is its high photosensitivity at low operating voltages (in the range of ±3 V).