This report presents the results of the study of thermoelectricpower of the thin block films of Bi1−xSbx (0 ≤ x ≤ 0.15)
with the thickness of 100−1000 nm on the mica and polyimide
substrates in the temperature range 77−300 K. The applied
technique for measuring thermoelectric power allows to prevent
the additional film deformation due to the difference in the thermal
expansion of the sample in question and measurement cell. The
structure, temperature dependences of the thermopower and the
resistivity of thin films were analyzed, and the power factor was
estimated. A difference was found in the nature of the temperature
dependences of the thermopower and the specific resistance
of films on mica and polyimide substrates. This difference is
explained by the change of the band structure parameters under the
influence of film deformation due to the difference in the thermal
expansion of the film and substrate.