Глубокие центры радиационных дефектов в монокристаллах CdZnTe, созданные потоком быстрых нейтронов

Abstract

The effect of a fast neutron flux (Φ = 10^14–10^15 cm^–2) on the electrical and photoluminescence properties of p -CdZnTe single crystals is studied. Isothermal annealing is performed ( T = 400–500 K), and the activation energy of the dissociation of radiation-induced defects is determined at E _D ≈ 0.75 eV.

Degradation Under Influence of Radiation Defects of Detector Properties of CdTe and Cd0.9Zn0.1Te Irradiated by Neutrons

“…Along with Cd0.9Zn0.1Te, CdTe is often considered as a detector material. During operation, the detectors are exposed to ionizing radiation, the effect of which on the crystals is the subject of research, for example, irradiation with protons [5], electrons [6], gamma rays [7], and neutrons [8] which have increased penetrating power. As a result of neutron bombardment, the radiation defects arise in a semiconductor crystal, which correspond to energy levels in the band gap, acting as centers of capture and recombination of nonequilibrium charge carriers generated by the detected radiation.…”

“…To increase the radiation resistance and improve the detector quality of Cd0.9Zn0.1Te, it is necessary to study and try to understand the mechanisms of the influence of radiation defects, which arise in a crystal under the neutron irradiation, on the electrophysical and detector properties of this material. However, due to the high resistivity of Cd0.9Zn0.1Te, such a task is practically impossible to resolve only by experimental methods [8][9][10], therefore, it is very important to apply additionally the numerical simulation basing on known experimental results using as initial data.…”