Abstract:The diode p-(Ga,Mn)As/n-InGaAs/n+-GaAs heterostructures, which differ in thickness (from 5 to 50 nm) of a diluted magnetic semiconductor (Ga,Mn)As layer, were fabricated and studied. We found the negative magnetoresistance effect, reaching 6–8% in a 3600 Oe magnetic field. The effect was conserved up to temperatures of 70–80 K and associated with a decrease in charge carrier scattering due to ferromagnetic ordering in the (Ga,Mn)As layer. The dependence of the magnetoresistance on the forward bias voltage is n… Show more
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