Изучение процесса газофазного осаждения Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- из триметилгаллия и кислорода в широком интервале температур

Abstract

Study of Ga2O3 deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga2O3 deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550-700 C, that is 150 C higher, then for GaN deposition in the same reactor.