Исследование влияния водородного травления поверхности SiC на последующий процесс формирования пленок графена

Abstract

The effect of temperature and duration of the 4H-SiC (0001) surface etching in hydrogen on the structural perfection of graphene films grown by the thermal destruction method was studied. Several technological regimes have been defined that allow etching of the substrate without changing the stoichiometric composition of the surface. It has been demonstrated that pre-growth etching in hydrogen at T = 1600 ° C for 1 min. allows one to obtain more uniform and structurally perfect graphene than etching at T = 1300 ° C for 30 minutes.