2023
DOI: 10.21883/pjtf.2023.06.54810.19404
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Исследование квантовых ям InP/GaP, полученных методом газофазной эпитаксии

Abstract: We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21 eV, 0.30 eV и 0.93 eV.

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