Исследование поверхностной проводимости двойного слоя таллия на Si(111) после адсорбции лития и рубидия

Abstract

Changes in the state of a thallium bilayer on Si(111) substrate, Si(111)6 × 6–Tl, after adsorption of lithium and rubidium were studied using low-energy electron-diffraction and four-point probe-conductivity measurements. New surface reconstructions 5 × 1 and $$5\sqrt 3 \times 5\sqrt 3 $$ 5 3 × 5 3 were observed after the adsorption of lithium, and 2 × 2 and $$\sqrt 3 \times \sqrt 3 $$ 3 × 3 reconstructions appeared after the adsorption of rubidium. The surface conductivity of silicon substrates was studied as a function of the dose of deposited adsorbate. It is established that the formation of both 5 × 1 and 2 × 2 reconstructions retains the conducting properties of a two-dimensional channel constituted by the thallium bilayer.