Abstract:The switching on process spatial dynamics of a laser-thyristor based on an AlGaAs/InGaAs/GaAs heterostructure with a thin p-base has been studied. The heterostructure had a modified base with a middle-doped layer at the n-emitter, which makes it possible to increase the operating voltages in order to generate nanosecond current pulses. In laser thyristor pulsed sources based on the proposed heterostructure, a high degree of current flow region localization arising during turn on process of the device was demon… Show more
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