Люминесцентный отклик фотонных кристаллов со встроенными Ge наноостровками с различной глубиной травления отверстий

Abstract

Two-dimensional Si-based photonic crystals with embedded Ge nanoislands were studied. In particular, dependences of the steady-state and time-resolved photoluminescence response on the depth of the air-holes which form the photonic crystal itself were investigated. It was shown that the maximum luminescence intensity was observed not for the fully-etched photonic crystals but for the intermediately etched ones. The possible origin of such a behavior is discussed.