Морфология и электронные свойства наноразмерных структур Si, созданных на поверхности CaF-=SUB=-2-=/SUB=-

Abstract

The surface morphology, crystal structures, and band-energy parameters have been studied for nanofilms and regularly arranged nanoscale Si phases with a thickness of 1–2 nm. The bandgap thickness of nanocrystalline Si phases with 2–3 single layers is found to be ~1.4 eV.