Наносетчатые Пленки Из Углеродных Нанотрубок С Х-Соединениями Для Электронных И Фотовольтаических Приложений

Abstract

The atomic structure, electronic and optoelectronic properties of nanosized films of carbon nanotubes with seamless cross-shaped X- junctions are studied. It is established that the topology of the arrangement of non-hexagonal elements in the contact region of nanotubes determines the energy stability of the atomic structure. It is revealed that the pore size of the film determines the type of conductivity. At the smallest pore sizes, the film is characterized by a metallic type of conductivity; with an increase in pore size, the gap in the band structure also increases and the film becomes semiconductor. Films with a minimum gap size exhibit good photovoltaic properties. The photocurrent for the considered film models can reach 2.4 mA•cm-2 in the atmosphere and 3.25 mA•cm-2 outside the atmosphere. The presence of a gap in the band structure makes nanosized films promising for nanoelectronics and optoelectronics.