2023
DOI: 10.21883/ftt.2023.01.53923.466
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Новые центры рекомбинации в слоях КРТ МЛЭ на подложках (013) GaAs

Abstract: A large inhomogeneity of the minority lifetime from 1 to 10 µs at 77 K over the area is observed in some experiments when high-quality HgCdTe layers of the electronic type of conductivity are grown on GaAs substrates with a diameter of 76.2 mm with the (013) orientation by the method of molecular beam epitaxy. As a rule, the such lifetimes are determined by carrier recombination at Shockley-Hall-Read (SHR) centers. Modern studies and ideas about the nature of the SHR centers do not allow us to explain the obse… Show more

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