Особенности воздействия ионов He и Ar низких энергий на нанопористые Si/SiO-=SUB=-2-=/SUB=--материалы

Abstract

In this paper molecular dynamics simulations of low-energy (50–200 eV) ion irradiation of nanoporous Si/SiO2-based materials were performed. Obtained results confirm the experimentally observed the densification of the uppermost surface layers of materials with small (less than 1.5 nm) pores due to pore collapse initiated by incident ions. Special features of the irradiation of nanoporous materials with He and Ar low-energy ions and the influence of their energy on structural changes of materials under study are discussed.