Особенности структуры поверхности и поверхностного электронного транспорта в коррелированном топологическом изоляторе SmB-=SUP=-VI-=/SUP=-
Е.А. Артёмов,
А.В. Мантузов,
В.С. Журкин
et al.
Abstract:We present the results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InAs quantum dots. The morphological, structural, and optical properties of the grown nanostructures have been studied. It is important to note that the emission from quantum dots is observed in the wavelength range from 750 to 970 nm. Assumptions about the nature of short-wavelength emission from quantum dots are formulated. In particular, one of the reasons may be a significant desorption of ind… Show more
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