Поглощение Инфракрасного Излучения В Полупроводниках

Fan, N.Y.

doi:10.3367/ufnr.0064.195802c.0315

Cited by 10 publications

(1 citation statement)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(7). According to the results of direct determination of values of a in the fundamental absorption band of silicon, 8 as well as from estimates of a which we have made from reflectivity data, 15 l/a < 10" 5 cm even for photon energies above 2.5 ev, while for hv = 4.9 ev, l/a < 10" 6 cm. Thus the condition of independence of β on hv is fulfilled for d = 10~4 cm even in the visible, and even to a greater degree in the ultraviolet.…”

Section: C) the Spectral Dependence Of The Quantum Yield Of Photoionlmentioning

confidence: 87%

Radiation Ionization Processes in Germanium and Silicon Crystals

Вавилов¹

1962

Sov. Phys. Usp.

View full text Add to dashboard Cite

1НЕ interaction of electromagnetic radiation and charged particles with crystals may involve ionization, i.e., the production of excess current carriers.* Experiments with single crystals of silicon have confirmed theoretical predictions on the effect of an externallyapplied electric field on the process of photoionization. A study of photoionization in the inner portions of the fundamental optical absorption bands of germanium and silicon has shown that at sufficiently high photon energies the quantum yield rises to values considerably greater than unity. For photons of energies many times greater than the width of the forbidden band, the quantum yield is proportional to the energy of the photon. In ionization due to fast charged particles, the energy lost per electron-hole pair produced is independent of the particle energy.

show abstract

Section: C) the Spectral Dependence Of The Quantum Yield Of Photoionlmentioning

confidence: 87%