Abstract:The morphology, composition, and electronic properties of the CoSiO film obtained on the CoSi2/Si(111) surface by implantation of O2+ ions in combination with annealing were studied. The parameters of energy bands are determined and information on the density of state of electrons of the valence band and conduction band is obtained. In particular, it was shown that the band gap of this film is ~ 2.4 eV.
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.