2020
DOI: 10.21883/pjtf.2020.16.49847.18293
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Получение наноразмерных пленок CoSiO на поверхности СoSi-=SUB=-2-=/SUB=- методом ионной имплантации

Abstract: The morphology, composition, and electronic properties of the CoSiO film obtained on the CoSi2/Si(111) surface by implantation of O2+ ions in combination with annealing were studied. The parameters of energy bands are determined and information on the density of state of electrons of the valence band and conduction band is obtained. In particular, it was shown that the band gap of this film is ~ 2.4 eV.

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