РАДИАЦИОННАЯ СТОЙКОСТЬ ДИОДОВ ШОТТКИ НА ОСНОВЕ 4h-Sic ПРИ ОБЛУЧЕНИИ ЭЛЕКТРОНАМИ С?ЭНЕРГИЕЙ 0.9 МЭВ, "Поверхность. Рентгеновские, Синхротронные И Нейтронные Исследования"

Лебедев, А.А.; Давыдовская, К.С.; Strel'chuk, Anatoly M.; Kozlovskii, V. V.

doi:10.7868/s0207352817090050

Поверхность. Рентгеновские, синхротронные и нейтронные исследов

2017

DOI: 10.7868/s0207352817090050

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РАДИАЦИОННАЯ СТОЙКОСТЬ ДИОДОВ ШОТТКИ НА ОСНОВЕ 4h-Sic ПРИ ОБЛУЧЕНИИ ЭЛЕКТРОНАМИ С?ЭНЕРГИЕЙ 0.9 МЭВ, "Поверхность. Рентгеновские, Синхротронные И Нейтронные Исследования"

А.А. Лебедев¹,

К.С. Давыдовская²,

Anatoly M. Strel'chuk³

et al.

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