2018
DOI: 10.21883/ftp.2018.11.46600.22
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Разработка Физико-Топологической Модели Реакции Мощного Вертикального ДМОП Транзистора На Воздействие Импульсного Гамма-Излучения

Abstract: A method for developing models of semiconductor devices with two-dimensional nonuniform concentration profiles of donors and acceptors in working regions of a semiconductor device structure is for the first time proposed based on a complex of physical-topological modeling of charge carrier transport and process simulation of the forming processes of the device structure. The application of process simulation is due to the need to correctly define the parameters of the semiconductor device structure, which are … Show more

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