Распыление Поверхности Кремния При Низкоэнергетической Высокодозовой Имплантации Ионами Серебра

Abstract

The results of the first practical observations of sputtering of a Si surface after implantation with Ag+ ions with an energy of 30 keV depending on the implantation dose D in the range from 2.5 • 10^16 to 1.5 • 10^17 ion/cm^2 at a fixed current density in the ion beam J = 8 μA/cm^2 are presented. And also with a variation of J = 2, 5, 8, 15, and 20 µA/cm^2 for a constant value D = 1.5 • 10^17 ion/cm^2. In the first case, a monotonic increase in the thickness of the sputtered layer to 50 nm is observed at maximum D, and the effective sputtering coefficient of the implanted Ag:PSi layer is 1.6. It was also established that the thickness of the sputtering layer increases with increasing J.