2019
DOI: 10.21883/jtf.2019.05.47476.346-18
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Рентгеновская Диагностика Дефектов Микроструктуры Кристаллов Кремния, Облученных Ионами Водорода

Abstract: Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness L _eff and mean relative deformation Δ a / a of a doped layer, are determined depending on the implantation dose and substrate temperature.

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