Спектральные И Рентгеновские Исследования Пленок Оксида Индия На Сапфировых Подложках

Тихий, А.А.; Николаенко, Ю.М.; Жихарева, Ю.И.; Жихарев, И.В.

doi:10.21883/os.2020.10.50029.138-20

Cited by 2 publications

(2 citation statements)

References 8 publications

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“…Анализ серии плёнок, полученных при различных температурах подложки, указывает на то, что при понижении температуры подложки не только возрастает толщина d полученных плёнок, но и увеличивается степень неоднородности материала [19][20][21][22] -показатель преломления n плёнок, осажённых на подложки с температурой 20 • C, линейно возрастает в направлении от подложки к шероховатому слою c 1.9 до 2 (табл. 1).…”

Section: результаты и обсуждениеunclassified

“…В настоящей работе собраны результаты ранее проведенных нами исследований структуры и оптических свойств плёнок In 2 O 3 , полученных на подложках Al 2 O 3 (012) в различных режимах dc-магнетронного распыления [15][16][17][18][19][20][21][22][23][24][25].…”

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Формирование плёнок In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- методом магнетронного напыления на подложках Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- (012)

Тихий,

Николаенко,

Свиридова

et al. 2022

Оптика И Спектроскопия

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The results of studies of the microstructure and optical characteristics of In2O3 films deposited by the dc-magnetron sputtering of a polycrystalline target onto single-crystal sapphire substrates are summarized. The technological regimes of films preparation differed in the deposition time, substrate temperature, and the presence of additional heat treatment of film structures in air. It has been established that the optical refractive index of films deposited on a "cold" substrate increases in the direction from the substrate to the external interface. Heat treatment of the films eliminates the inhomogeneity of the refractive index and leads to a decrease in the band gap. The observed optical properties are explained by the thickness inhomogeneous microstructure of the films, which is formed during sputtering of a target with a relatively low mechanical strength.

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Section: результаты и обсуждениеunclassified

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Формирование плёнок In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- методом магнетронного напыления на подложках Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- (012)

Тихий,

Николаенко,

Свиридова

et al. 2022

Оптика И Спектроскопия

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Optical Properties and Structure of In2O3 Films Deposited on Al2O3 (012) Substrates by dc-Magnetron Sputtering

Tikhii,

Nikolaenko,

Svyrydova

et al. 2023

Poverhnostʹ. Rentgenovskie, sinhrotronnye i nejtronnye issledov

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The results of studies of the optical properties and structure of In2O3 films on Al2O3 (012) substrates deposited by dc-magnetron sputtering are summarized. The investigated films differ in the deposition time, substrate temperature, and the presence of additional heat treatment in air. According to X-ray diffraction measurements, these films show a reflex, which correspond to the (222) plane of the cubic modification of In2O3. Its exact position and half-width depend on the deposition time. The optical properties of the obtained films are explained by the microstructure, which is inhomogeneous in thickness and formed during the sputtering of a target with a relatively low mechanical strength. Thus, the refractive index of films deposited on substrates at room temperature increases in the direction from the substrate to the external interface. At a substrate temperature of more than 300°C, the refractive index of the films is uniform, except for a rough layer on the surface. Heat treatment reduces the number of defects in the crystal structure of the films, and leads to densification of the film material. As a result, the inhomogeneity of the refractive index disappears and the observed band gap for direct transitions decreases. The latter result from a change in the Burstein–Moss shift in consequence of the decrease of lattice defects concentration. The band gap for “indirect” transitions (that corresponds to the true value of the band gap) is insensitive to annealing.

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Спектральные И Рентгеновские Исследования Пленок Оксида Индия На Сапфировых Подложках

Cited by 2 publications

References 8 publications

Формирование плёнок In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- методом магнетронного напыления на подложках Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- (012)

Формирование плёнок In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- методом магнетронного напыления на подложках Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- (012)

Optical Properties and Structure of In<sub>2</sub>O<sub>3</sub> Films Deposited on Al<sub>2</sub>O<sub>3</sub> (012) Substrates by dc-Magnetron Sputtering

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