2018
DOI: 10.21883/ftt.2018.05.45782.252
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Тонкопленочные гетероструктуры In-=SUB=-x-=/SUB=-Al-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-As-=SUB=-z-=/SUB=-Sb-=SUB=-1-z-=/SUB=-/GaSb, выращенные в поле температурного градиента

Abstract: The thin-film In_ x Al_ y Ga_1 – x – y As_ z Sb_1 – z /GaSb heterostructures have been grown from liquid phase in a temperature gradient. The growth kinetics, the composition, the structural perfection, and the luminescence properties of the InAlGaAsSb thin films grown on a GaSb substrate have been studied.

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