Фотолюминесценция гетероструктур CdTe/ZnTe с номинальными толщинами слоев CdTe от 1 до 8 монослоев, выращенных методом атомного наслаивания

Abstract

The luminescence of CdTe layers with a nominal thickness of 1, 2, 4, and 8 monolayers grown by atomic layer epitaxy in ZnTe matrix was studied. It is shown that layers with a thickness of 1 and 2 monolayers are homogeneous, while layers with a nominal thickness of 4 and 8 monolayers are the planar QD arrays. The sizes of QDs and their size dispersion increase with an increase in the nominal thickness of CdTe layer. The luminescence excitation spectra of CdTe layer in the samples vary significantly. It has been shown that, depending on the energy distance between the CdTe and ZnTe exciton levels, the ratio of contributions to the energy transfer via the exciton ZnTe and charge carriers varies greatly.