2022
DOI: 10.21883/pjtf.2022.24.54020.19236
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Электронная структура ультратонких интерфейсов Cs/Bi-=SUB=-2-=/SUB=-Se-=SUB=-3-=/SUB=-

Abstract: The electronic structure of ultrathin Cs/Bi2Se3 interfaces has been studied by photoelectron spectroscopy using synchrotron radiation. The experiments were carried out in situ in an ultrahigh vacuum with submonolayer Cs coverages on Bi2Se3 samples. It was found that the adsorption of Cs causes changes in the spectra of the core levels of Bi 4f, Bi 5d, and Se 3d. It has been established that Cs atoms are adsorbed predominantly on Bi atoms in the upper surface layer. The states of the valence band are studied fo… Show more

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