Электронные и оптические свойства тонких пленок GaAlAs/GaAs

Abstract

It is shown that the formation of GaAlAs nanofilms on the GaAs surface leads to an increase in the value of the emission coefficient of true secondary electrons and of the quantum yield of photoelectrons, which is explained by the difference in the depth of the exit zone of true secondary electrons for GaAs and GaAlAs.