三维掩模光刻成像快速计算模型

Abstract

Objective Scattering caused by the thickness of the absorber layer of the mask leads to deviations in deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography. Traditional lithography models are based on Hopkins' method and the thin mask approximation, wherein diffracted waves from the mask satisfy the Fourier transform of the mask patterns. As