𝛍m-resolution thickness distribution measurement of transparent glass films by using a multi-wavelength phase-shift extraction method in the large lateral shearing interferometer

Ren, Yugang; Cao, Zhang; Tang, Xiaoyang; Xie, Hongtu; Xu, Lijun

doi:10.1364/oe.27.002899

Cited by 10 publications

(2 citation statements)

References 35 publications

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“…This method obtains the thickness by collecting the interference intensity of the upper and bottom surfaces of the substrate. Its measurement accuracy and efficiency are relatively high, but the measurement range of this method usually only reaches the micron level [10]. The ellipsometry method obtains the thickness by detecting changes in the polarization state of the reflected light from the sample.…”

Section: Introductionmentioning

confidence: 99%

High-Precision Semiconductor Substrate Thickness Gauge Based on Spectral-Domain Interferometry

Zhong,

He,

Deng

et al. 2024

Photonics

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The flatness of semiconductor substrates is an important parameter for evaluating the surface quality of semiconductor substrates. However, existing technology cannot simultaneously achieve high measurement efficiency, large-range thickness measurement, and nanometer-level measurement accuracy in the thickness measurement of semiconductor substrates. To solve the problems, we propose to apply the method that combines spectral-domain optical coherence tomography (SD-OCT) with the Hanning-windowed energy centrobaric method (HnWECM) to measure the thickness of semiconductor substrates. The method can be employed in the full-chip thickness measurement of a sapphire substrate, which has a millimeter measuring range, nanometer-level precision, and a sampling rate that can reach up to 80 kHz. In this contribution, we measured the full-chip thickness map of a sapphire substrate by using this method and analyzed the machining characteristics. The measurement results of a high-precision mechanical thickness gauge, which is widely used for thickness measurement in the wafer fabrication process, were compared with the proposed method. The difference between these two methods is 0.373%, which explains the accuracy of the applied method to some extent. The results of 10 sets of repeatability experiments on 250 measurement points show that the maximum relative standard deviation (RSD) at this point is 0.0061%, and the maximum fluctuation is 71.0 nm. The above experimental results prove that this method can achieve the high-precision thickness measurement of the sapphire substrate and is of great significance for improving the surface quality detection level of semiconductor substrates.

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Section: Introductionmentioning

confidence: 99%

High-Precision Semiconductor Substrate Thickness Gauge Based on Spectral-Domain Interferometry

Zhong,

He,

Deng

et al. 2024

Photonics

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“…A Mach-Zehnder type SRI was used to make vibration-insensitive measurements [5]. Another vibration-insensitive measurement was made with a shearing interferometer by using three different wavelengths [6]. A special configuration was incorporated into a SWLI to measure the thickness of a gauge block [7].…”

Section: Introductionmentioning

confidence: 99%

A dual-scanning white-light interferometer for exact thickness measurement of a large-thickness glass plate

Zhang

Sasaki

Luo

et al. 2020

Meas. Sci. Technol.

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Conventional scanning white-light interferometers (SWLIs) cannot measure the exact shape of a thick glass plate because of the large dispersion effect. In this paper, a novel dual SWLI is proposed where the thicknesses of both an object and a compensation glass plate can be measured exactly in four-step measurements by decreasing the dispersion effect in both arms of the dual SWLI. The compensation glass plate is made of the same material as the object and has a similar thickness. The peak positions of the interference signals in the SWLI can be exactly measured using a piezoelectric transducer stage and an additional interference signal which detects the time-varying optical path difference in the SWLI. Experimental results show that the measurement error is less than 60 nm for a glass plate of thickness 1 mm.

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Measurement of thin liquid film thickness in pipes based on optical interferometry

Xue

2022

Optoelectron. Lett.

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𝛍m-resolution thickness distribution measurement of transparent glass films by using a multi-wavelength phase-shift extraction method in the large lateral shearing interferometer

Cited by 10 publications

References 35 publications

High-Precision Semiconductor Substrate Thickness Gauge Based on Spectral-Domain Interferometry

High-Precision Semiconductor Substrate Thickness Gauge Based on Spectral-Domain Interferometry

A dual-scanning white-light interferometer for exact thickness measurement of a large-thickness glass plate

Measurement of thin liquid film thickness in pipes based on optical interferometry

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