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Scintillating parameters of isovalently doped ZnSe(Te, O) crystals depend strongly on intrinsic point defects and impurities and deteriorate at different irradiations, because of structure damage. Study of ZnSe(Te, O) crystals with radiometric X-ray and instrumental neutron activation analyses (INAA) has showed that all samples had significant as-grown non-stoichiometry: ~ 49% Se and ~ 51% Zn, while the ideal stoichiometric ratio for ZnSe is 54.7% Se and 45.3% Zn. When doping with 0.5% Te, the impurity was found to be distributed non-evenly over the bulk with two maxima at -0.5 and = 0.25%, while at lower doping levels Te ions were distributed evenly. During ~/-and neutron irradiation up to 10 -5 g of ZnSe at ratio 50-60% Zn and 40-50% Se emitted from the surface due to radiolysis. This is the reason of weakening the luminescence delete.