The wide application of photonic crystals on the basis of regular domain structures (RDS) in photon ics, nonlinear optics, and information and computer technologies is hampered by the long term technolog ical cycle of their formation by the existing methods. The method of RDS formation based on the use of an inhomogeneous electric field produced by structured electrodes [1,2], the method of "drawing the domain pattern" by an electron beam [3,4], and other meth ods are hardly applicable for mass production of pho tonic crystals. The promising methods are those that have the minimum duration of the technological cycle and make it possible to churn out such products.Another problem to be solved is the control of domain sizes in the process of exploitation of such RDS devices. Multiple formation of the domain pat tern of a given configuration by the methods employ ing photolithography during exploitation of these devices does not seem possible.In 2007, we proposed a thermal interference prin ciple of RDS formation by means of a temperature field having a heterothermal character (of the temper ature lattice), which makes possible local domain switching by a homogeneous electric field [5]. Accord ing to this principle, the local stimulation of domain switching is attained by means of a temperature lattice produced by a pulsed action of interfering waves. This approach makes it possible to decrease substantially the time of forming an RDS of the head to tail type as compared to the methods of [1, 3, 6] and avoid the restrictions caused by diffraction, which are inherent to the method of [7].The thermal interference principle makes it possi ble to create a technology based on combined action of two pulses on a ferroelectric: interfering (electromag netic or acoustic) waves, which produce the tempera ture lattice, and a homogeneous electric field, which provides selective domain switching (Fig. 1). On the basis of this principle, optical interference [8] and acoustic interference [9, 10] methods of RDS forma tion have been proposed and studied.Abstract-A technology for the formation of one and two dimensional structures by means of interfering (electromagnetic or acoustic) waves and a homogeneous electric field has been proposed. This technology has made it possible to retune the spatial period of the structure during its operation by varying the frequency of interfering waves and the angles of their incidence onto a crystal. It has been shown that the duration of the technological cycle slightly exceeds the domain switching time. The technology is applicable to crystals of LiNbO 3 , KTiOPO 4 (with a high potassium content), and some others. P E t i t t s t Fig. 1. Pulses of the wave power density P and the inverting electric field E.

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The algorithm for calculating the technological parameters of formation of domain structures in ferroelectrics by the acoustic-interference method is developed. The basic parameters for c-axis-oriented PZT films grown on metallic substrates are estimated. It is shown that the use of the acoustic-interference method allows one to form regular domain structures in PZT films with record-breaking short work cycle duration t ≤ 0.25 μs.

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