Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence characteristics aimed at the development of white LEDs are demonstrated. Although some of the presented LEDs show visible emission for applied biases in excess of 10 V, optimized structures are expected to provide the same emission at much lower voltage. Finally, lasing from ZnO nanorods is briefly reviewed. An example of a recent whispering gallery mode (WGM) lasing from ZnO is demonstrated as a way to enhance the stimulated emission from small size structures.

Room-temperature near-band-edge photoluminescence of ZnO is composed of contributions from free-exciton recombination and its longitudinal-optical phonon replica. By tracking the photoluminescence of ZnO nanowires from 4K up to room temperature, the authors show that the relative contributions of these emission lines show a strong variation for samples grown under different conditions. The varying coupling strengths of the excitons and phonons thus lead to a significant shift of the energy position of the room-temperature photoluminescence. They verify that this is not caused by laser heating or stress/strain but is most probably related to crystalline imperfections in the surface region.

Nonlinear optics of semiconductors is an important field of fundamental and applied research, but surprisingly the role of excitons in the coherent processes leading to harmonics generation has remained essentially unexplored. Here we report results of a comprehensive experimental and theoretical study of the three-photon process of optical second harmonic generation (SHG) involving the exciton resonances of the noncentrosymmetric hexagonal wide-band-gap semiconductor ZnO in the photon energy range of 3.2 − 3.5 eV. Resonant crystallographic SHG is observed for the 1s(A, B), 2s(A, B), 2p(A, B), and 1s(C) excitons. We show that strong SHG signals at these exciton resonances are induced by the application of a magnetic field when the incident and the SHG light wave vectors are along the crystal z-axis where the crystallographic SHG response vanishes. A microscopic theory of SHG generation through excitons is developed, which shows that the nonlinear interaction of coherent light with excitons has to be considered beyond the electric-dipole approximation. Depending on the particular symmetry of the exciton states SHG can originate from the electric-and magnetic-field-induced perturbations of the excitons due to the Stark effect, the spin as well as orbital Zeeman effects, or the magneto-Stark effect. The importance of each mechanism is analyzed and discussed by confronting experimental data and theoretical results for the dependencies of the SHG signals on photon energy, magnetic field, electric field, crystal temperature, and light polarization. Good agreement is obtained between experiment and theory proving the validity of our approach to the complex problem of nonlinear interaction of light with ZnO excitons. This general approach can be applied also to other semiconductors.

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The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.