We investigate the wetting properties of random nanostructured surfaces, with particular attention devoted to the phenomenon of contact angle hysteresis. For this purpose, solid substrates were initially tailored at a nanometric scale by using swift heavy ion irradiation which produced a random distribution of defects. We characterize the wetting properties of water on these heterogeneous surfaces by an average spreading parameter and by the contact angle hysteresis. For weak values of the areal density of defects phi(d), the hysteresis grows linearly with phi(d), indicating that the defects pin the contact line individually. However, at higher values of phi(d), collective pinning effects appear and the hysteresis decreases with increasing phi(d). We show that in the linear regime our experimental results are in good quantitative agreement with theoretical predictions for contact angle hysteresis induced by a single isolated defect on a solid surface.

CaF 2 crystals as representatives of the class of ionic nonamorphizable insulators were irradiated with many different swift heavy ions of energy above 0.5 MeV/u providing a broad range of electronic energy losses (S e ). Beam-induced modifications were characterized by Channeling Rutherford Backscattering Spectrometry (C-RBS) and x-ray diffraction (XRD), complemented by transmission electron microscopy (TEM). Results from C-RBS give evidence of significant damage appearing above a S e threshold of 5 ± 2 keV/nm. A second critical S e appears around 18 ± 3 keV/nm; below this value the damage as function of ion fluence saturates at 20%, while above this the damage saturation level increases with S e , reaching ∼60% for ions of S e = 30 keV/nm. XRD measurements also show effects indicating two threshold values. Above 5 keV/nm, the widths of the XRD reflection peaks increase due to the formation of nanograins, as seen by TEM, while a significant decrease of the peak areas only occurs above 18 keV/nm. The track radii deduced from C-RBS measurements are in agreement with those extracted from the fluence evolution of the widths of the XRD peaks. Moreover, track radii deduced from the peak area analysis are slightly smaller but in agreement with previous track observations by high resolution electron microscopy. Calculations based on the inelastic thermal spike model suggest that the lower threshold at 5 keV/nm is linked to the quenching of the molten phase, whereas the threshold at 18 keV/nm can be interpreted as quenching of the boiling phase. The results of CaF 2 are compared with other nonamorphizable materials such as LiF and UO 2 .