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We have investigated the effects of 60 Co gamma-ray irradiation on the electrical properties of an Al/C 24 H 12 /p-Si metal-polymer-semiconductor (MPS) Schottky diode such as series resistance (R s ), ideality factor (n) and barrier height (Φ B ). The samples have been prepared using an evaporation technique and irradiated with a total dose range of 0-90 kGy at room temperature. Current-voltage (I-V) measurements have been performed before and after irradiation in the dark and at room temperature. It has been observed that the barrier height and series resistance values are decreased after irradiation while ideality factor is increased. Decreasing in R s indicates that the product of the mobility and the free carrier concentration has increased due to the radiation defects. Experimental results show that this material can be modified using 60 Co gamma-ray irradiation.

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