The growth of heteroepitaxial Si 0.8 Ge 0.2 films on Si͑100͒ by a novel all laser-assisted technique using only ArF excimer laser radiation is demonstrated. Amorphous 30 nm thick films are grown by pulsed laser deposition from alternating pure Si and Ge targets on clean Si substrates. Melting and rapid solidification is then induced by pulsed irradiation (0.54 J/cm 2), promoting epitaxial growth.

Using the recently obtained phase-controlled fewcycle laser pulse profiles we numerically analyse the differences on the dynamics of a strongly driven plasma. We study two-cycle carrier amplitude envelopes with different electric field phases interacting with a plasma slab, using a particle-in-cell code 1D3V. Results show the influence of the pulse phase on the dynamics of the released electrons.

The dynamical response of a relativistic bunch of electrons injected in a planar magnetic undulator and interacting with a counterpropagating electromagnetic wave is studied. We demonstrate a resonance condition for which