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In this work, we perform a theoretical analysis of the electronic and optical properties of CdS quantum dot (QD) encapsulated in ZnSe matrix. The intersubband energy levels and the matching wave functions are calculated using the effective mass approximation (E.M.A) and the compact density matrix approach. The effect of self-energy contribution due to the charging of CdS QD with ZnSe matrix has been taken into account from the beginning. We found that the linear and nonlinear optical properties are considerably impacted by the size parameter and the optical intensity [Formula: see text]. The results obtained have essential consequences for the design of optoelectronic and photonic devices.

The variational approach has been used to theoretically investigate the effects of the dot radius and electric filed strength on binding energy (BE), Stark-shift and photoionization-cross section PICS of donor impurity confined in the (CdS/ZnSe) core/shell spherical quantum dot CSSQDs capped in different dielectric matrices such as the silicon dioxide (SiO2), the polyvinyl chloride (PVC) and the polyvinyl alcohol (PVA). Our achieved results showed that the BE and the Stark-shift depended highly on the presence of the dielectric matrix and the modification of the core radius. The increase of applied electric field (EF) intensity and the core radius induces a decrease in the BE and lead to an improvement of PICS magnitude accompanied by redshift of their resonance picks.