Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

We evaluated the long-term stability of CdMnTe (CMT) detectors treated with ammonium-saltbased passivants. Passivation improved the detector's stability and reduced the degradation of its energy resolution with time. Here, we stored passivated 5 × 5 × 9 mm 3 CMT detectors in an ambient environment for 550 days and evaluated the effects of aging by measuring their pulse-height spectra over time. The CMT detector passivated with ammonium fluoride exhibited a higher leakage current after 550 days, and its performance was degraded accordingly. Our analyses of the leakage current for a pixelated CMT detector revealed that the edges and the corners of the detector were responsible for the higher leakage, which resulted from a degradation of the passivation layer in those areas. Assurance of the long-term stability and reproducibility of the detector necessitates that the edges and the corners be mechanically passivated following chemical treatment.