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The aim of the present contribution is to give a review on the recent work concerning Cd-free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite-type absorbers such as Cu(In,Ga)Se 2 , CuInS 2 , or Cu(In,Ga)(S,Se) 2 . The corresponding solar-cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In 2 S 3 , ZnS, Zn 1 À x Mg x O.

Monocrystalline normaln‐FeS2 (pyrite, Enormalg≈0.95 normaleV ) photoelectrodes with high photocurrent quantum efficiency (> 90%) have been obtained by improvement of the solid‐state and interfacial chemistry. During intensive illumination (4–5 W/cm2), photocurrent densities between 1 and 2 A/cm2 have been observed for single crystals with high electron mobility false(μ=180normalthinsp;cm2‐false(V‐normals)−1false) in presence of the I−/I3− redox couple. Under illumination, a charge of 623.000 C/cm2 was passed without evidence of photocorrosion. The influence of etching treatments, various redox systems, and organic electrolytes on the photochemistry of FeS2 was investigated. The formation and the dynamics of a thin oxidation layer that forms at the surface of the electrode in the presence of an acid electrolyte were studied using light reflection techniques and ESCA. FeS2 has a valence energy band with strong d‐characterlike Mo‐ and W‐dichalcogenides, that is significant for its stabilization. An unresolved problem with this photoelectrode concerning applications in solar cells is the small photopotential which up to now does not exceed 200 mV (500 mV is theoretically possible). A strong pinning of the Fermi level by surface states is evident from photoelectrochemical measurements. In addition, it is expected that the distance between the conduction band and the Fermi level in our sample will be too large. A low effective carrier density false(n=0.7×1015 cm−3false) was measured, resulting in an extended space‐charge layer, which has to be compared with the high absorption coefficient ( α>6.0×105 cm−1 for hν>1.3 normaleV ).

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